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  • FDY102PZ

FDY102PZ

FDY102PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDY102PZ
  • Package: SC-89, SOT-490
  • Datasheet: PDF
  • Stock: 886
  • Description: FDY102PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs (Max) ±8V
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 830mA
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Height 780μm
Length 1.7mm
Width 980μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 500MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Turn On Delay Time 3.5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500m Ω @ 830mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C 830mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4.5V
Rise Time 2.9ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
See Relate Datesheet