English

All Products

View All >>
  • FDZ3N513ZT

FDZ3N513ZT

MOSFET 30V Integrated NMOS and Shottky Diode


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDZ3N513ZT
  • Package: 4-UFBGA, WLCSP
  • Datasheet: PDF
  • Stock: 727
  • Description: MOSFET 30V Integrated NMOS and Shottky Diode (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, WLCSP
Number of Pins 4
Weight 42mg
Transistor Element Material SILICON
Operating Temperature -55°C~125°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature ESD PROTECTION
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 1W
Turn On Delay Time 3.1 ns
Forward Current 1.1A
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 462m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 85pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
Rise Time 1.9ns
Drive Voltage (Max Rds On,Min Rds On) 3.2V 4.5V
Vgs (Max) +5.5V, -0.3V
Fall Time (Typ) 2.7 ns
Turn-Off Delay Time 9.6 ns
Reverse Recovery Time 29 ns
Continuous Drain Current (ID) 1.1A
Threshold Voltage 700mV
Peak Reverse Current 300μA
Max Repetitive Reverse Voltage (Vrrm) 25V
Gate to Source Voltage (Vgs) 5.5V
Drain-source On Resistance-Max 0.52Ohm
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Body)
Nominal Vgs 700 mV
Feedback Cap-Max (Crss) 25 pF
Height 332μm
Length 1mm
Width 1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet