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FGA50S110P

FGA50S110P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGA50S110P
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 200
  • Description: FGA50S110P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.1kV
Max Collector Current 50A
Collector Emitter Breakdown Voltage 1.1kV
Voltage - Collector Emitter Breakdown (Max) 1100V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 370 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Turn Off Time-Nom (toff) 492 ns
IGBT Type Trench Field Stop
Gate Charge 195nC
Current - Collector Pulsed (Icm) 120A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
See Relate Datesheet