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FGB40N60SM

FGB40N60SM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGB40N60SM
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 175
  • Description: FGB40N60SM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Switching Energy 870μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 17ns
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 349W
Terminal Form GULL WING
Base Part Number FGB40N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 28ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 349W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Max Breakdown Voltage 600V
Turn On Time 37 ns
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Turn Off Time-Nom (toff) 132 ns
IGBT Type Field Stop
Gate Charge 119nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 12ns/92ns
See Relate Datesheet