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FGH20N60UFDTU

FGH20N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGH20N60UFDTU
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 365
  • Description: FGH20N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A
Turn Off Time-Nom (toff) 155 ns
IGBT Type Field Stop
Gate Charge 63nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 13ns/87ns
Switching Energy 380μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 64ns
Height 20.6mm
Length 15.6mm
Factory Lead Time 4 Weeks
Width 4.7mm
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Radiation Hardening No
Mounting Type Through Hole
Package / Case TO-247-3
REACH SVHC No SVHC
Number of Pins 3
Weight 6.39g
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Lead Free Lead Free
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 165W
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 13 ns
Power - Max 165W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 87 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 34 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V
Turn On Time 29 ns
Test Condition 400V, 20A, 10 Ω, 15V
See Relate Datesheet