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FGH40T120SMD

FGH40T120SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGH40T120SMD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 885
  • Description: FGH40T120SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 555W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 555W
Input Type Standard
Turn On Delay Time 40 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 475 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Reverse Recovery Time 65 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.8V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Max Junction Temperature (Tj) 175°C
Continuous Collector Current 80A
IGBT Type Trench Field Stop
Gate Charge 370nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 40ns/475ns
Switching Energy 2.7mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Height 24.75mm
Length 15.87mm
Width 4.82mm
RoHS Status ROHS3 Compliant
See Relate Datesheet