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FGH60N60SMD

FGH60N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGH60N60SMD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 163
  • Description: FGH60N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 600W
Base Part Number FGH60N60
Number of Elements 1
Rise Time-Max 70ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 27 ns
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 146 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 39 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 59 ns
Test Condition 400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
Turn Off Time-Nom (toff) 163 ns
IGBT Type Field Stop
Gate Charge 189nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 18ns/104ns
Switching Energy 1.26mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 68ns
Height 20.6mm
Length 15.6mm
Width 4.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet