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FGH60N60UFDTU

FGH60N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGH60N60UFDTU
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 633
  • Description: FGH60N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Published 2015
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 298W
Base Part Number FGH60N60
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 130 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 47ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Current - Collector (Ic) (Max) 120A
Collector Emitter Saturation Voltage 600V
Turn On Time 83 ns
Test Condition 400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 60A
Turn Off Time-Nom (toff) 204 ns
IGBT Type Field Stop
Gate Charge 188nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 23ns/130ns
Switching Energy 1.81mJ (on), 810μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 80ns
Height 20.6mm
Length 15.6mm
Width 4.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
See Relate Datesheet