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FGH75T65UPD-F085

FGH75T65UPD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGH75T65UPD-F085
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 395
  • Description: FGH75T65UPD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 375W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Rise Time-Max 71ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 375W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 150A
Reverse Recovery Time 85 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.21V
Turn On Time 87 ns
Test Condition 400V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Turn Off Time-Nom (toff) 197 ns
IGBT Type Trench Field Stop
Gate Charge 578nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 32ns/166ns
Switching Energy 2.85mJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet