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FGP10N60UNDF

FGP10N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGP10N60UNDF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 504
  • Description: FGP10N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 139W
Number of Elements 1
Element Configuration Single
Power Dissipation 139W
Input Type Standard
Turn On Delay Time 8.1 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 55 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 37.7 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Turn On Time 15.4 ns
Test Condition 400V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 10A
Turn Off Time-Nom (toff) 89.3 ns
IGBT Type NPT
Gate Charge 37nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 8ns/52.2ns
Switching Energy 150μJ (on), 50μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8.5V
Fall Time-Max (tf) 24.8ns
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet