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FJAF4210YTU

FJAF4210YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FJAF4210YTU
  • Package: TO-3P-3 Full Pack
  • Datasheet: -
  • Stock: 676
  • Description: FJAF4210YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 3A 4V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 140V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -200V
Emitter Base Voltage (VEBO) -6V
hFE Min 50
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 6.962g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -140V
Max Power Dissipation 80W
Current Rating -10A
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
See Relate Datesheet