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FJP13007H1TU

FJP13007H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FJP13007H1TU
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 273
  • Description: FJP13007H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.214g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 80W
Current Rating 8A
Frequency 4MHz
Base Part Number FJP13007
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 5
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet