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FJP13007H1TU-F080

FJP13007H1TU-F080 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FJP13007H1TU-F080
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 967
  • Description: FJP13007H1TU-F080 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
Transition Frequency 4MHz
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 700V
Power Dissipation-Max (Abs) 80W
Emitter Base Voltage (VEBO) 9V
hFE Min 5
RoHS Status ROHS3 Compliant
See Relate Datesheet