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FJP2145TU

FJP2145TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FJP2145TU
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 798
  • Description: FJP2145TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Emitter Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 20V
Transition Frequency 28.4MHz
Collector Emitter Saturation Voltage 151mV
Collector Base Voltage (VCBO) 1.1kV
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 7 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~125°C TJ
Packaging Tube
Published 2013
Series ESBC™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 120W
Number of Elements 1
Element Configuration Single
Power Dissipation 120W
Transistor Application SWITCHING
Gain Bandwidth Product 15MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
See Relate Datesheet