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FJX4006RTF

Transistors Switching - Resistor Biased PNP Si Transistor Epitaxial


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FJX4006RTF
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 949
  • Description: Transistors Switching - Resistor Biased PNP Si Transistor Epitaxial (Kg)

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Details

Tags

Parameters
Resistor - Base (R1) 10 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 36 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 30mg
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
HTS Code 8541.21.00.95
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -100mA
Base Part Number FJX4006
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -10V
hFE Min 68
See Relate Datesheet