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FP35R12W2T4BOMA1

IGBT MODULE VCES 1200V 35A


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-FP35R12W2T4BOMA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 443
  • Description: IGBT MODULE VCES 1200V 35A (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 54A
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 35A
Turn Off Time-Nom (toff) 510 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 23
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 35
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 215W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
See Relate Datesheet