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  • FQA11N90-F109

FQA11N90-F109

MOSFET N-CH 900V 11.4A TO-3P


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQA11N90-F109
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 809
  • Description: MOSFET N-CH 900V 11.4A TO-3P (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 65 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 960m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.4A Tc
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Rise Time 135ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 165 ns
Continuous Drain Current (ID) 11.4A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.96Ohm
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 45.6A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Pbfree Code yes
Part Status Active
See Relate Datesheet