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FQA160N08

FQA160N08 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQA160N08
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 232
  • Description: FQA160N08 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 160A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Turn On Delay Time 85 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Input Capacitance (Ciss) (Max) @ Vds 7900pF @ 25V
Mount Through Hole
Current - Continuous Drain (Id) @ 25°C 160A Tc
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Package / Case TO-3P-3, SC-65-3
Rise Time 970ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Number of Pins 3
Vgs (Max) ±25V
Weight 6.401g
Fall Time (Typ) 410 ns
Transistor Element Material SILICON
Turn-Off Delay Time 260 ns
Operating Temperature -55°C~175°C TJ
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 25V
Packaging Tube
Drain-source On Resistance-Max 0.007Ohm
Published 2000
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 640A
Series QFET®
JESD-609 Code e3
Height 18.9mm
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 15.8mm
Number of Terminations 3
Width 5mm
ECCN Code EAR99
Terminal Finish Tin (Sn)
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Lead Free Lead Free
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
See Relate Datesheet