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  • FQA28N50

FQA28N50

FQA28N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQA28N50
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 707
  • Description: FQA28N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 28.4A
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Turn On Delay Time 100 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 14.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28.4A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 290ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 175 ns
Turn-Off Delay Time 250 ns
Continuous Drain Current (ID) 28.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 500V
Nominal Vgs 5 V
Height 18.9mm
Length 15.8mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet