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  • FQA32N20C

FQA32N20C

FQA32N20C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQA32N20C
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 994
  • Description: FQA32N20C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Continuous Drain Current (ID) 32A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.082Ohm
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 955 mJ
Height 18.9mm
Length 15.8mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 32A
Number of Elements 1
Power Dissipation-Max 204W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 204W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 210 ns
Turn-Off Delay Time 245 ns
See Relate Datesheet