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  • FQA55N25

FQA55N25

FQA55N25 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQA55N25
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 532
  • Description: FQA55N25 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Height 18.9mm
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Length 15.8mm
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Width 5mm
Series QFET®
JESD-609 Code e3
REACH SVHC No SVHC
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
Number of Terminations 3
ECCN Code EAR99
Lead Free Lead Free
Resistance 40mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 55A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Turn On Delay Time 100 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 700ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 250 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 55A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 220A
See Relate Datesheet