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  • FQA6N90C-F109

FQA6N90C-F109

MOSFET 900V N-Ch Q-FET advance C-Series


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQA6N90C-F109
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 354
  • Description: MOSFET 900V N-Ch Q-FET advance C-Series (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 198W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 198W
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 650 mJ
Height 18.9mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet