English

All Products

View All >>
  • FQA8N90C-F109

FQA8N90C-F109

MOSFET N-CH 900V 8A TO-3P


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQA8N90C-F109
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 820
  • Description: MOSFET N-CH 900V 8A TO-3P (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Weight 6.401g
Vgs (Max) ±30V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Fall Time (Typ) 70 ns
Packaging Tube
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 8A
Series QFET®
Gate to Source Voltage (Vgs) 30V
JESD-609 Code e3
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 850 mJ
Pbfree Code yes
Radiation Hardening No
Part Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 240W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 240W
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9 Ω @ 4A, 10V
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 25V
Mount Through Hole
Current - Continuous Drain (Id) @ 25°C 8A Tc
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Package / Case TO-3P-3, SC-65-3
Rise Time 110ns
Number of Pins 3
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet