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FQA90N15

FQA90N15 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQA90N15
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 855
  • Description: FQA90N15 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs (Max) ±25V
Fall Time (Typ) 410 ns
Turn-Off Delay Time 470 ns
Continuous Drain Current (ID) 90A
Threshold Voltage 4V
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 10 hours ago)
Gate to Source Voltage (Vgs) 25V
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Drain to Source Breakdown Voltage 150V
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Height 18.9mm
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series QFET®
Length 15.8mm
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Width 5mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
REACH SVHC No SVHC
ECCN Code EAR99
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Lead Free Lead Free
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 90A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Turn On Delay Time 105 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 285nC @ 10V
Rise Time 760ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet