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FQB27N25TM-F085

MOSFET N-CH 250V 25.5A 131M


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQB27N25TM-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 293
  • Description: MOSFET N-CH 250V 25.5A 131M (Kg)

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Details

Tags

Parameters
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Drive Voltage (Max Rds On,Min Rds On) 10V
Mount Surface Mount
Mounting Type Surface Mount
Vgs (Max) ±30V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Fall Time (Typ) 60 ns
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Turn-Off Delay Time 81 ns
Series Automotive, AEC-Q101
Continuous Drain Current (ID) 25.5A
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Gate to Source Voltage (Vgs) 30V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
DS Breakdown Voltage-Min 250V
Resistance 110mOhm
Avalanche Energy Rating (Eas) 972 mJ
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 417W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 131m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25.5A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 122ns
Drain to Source Voltage (Vdss) 250V
See Relate Datesheet