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  • FQD10N20CTM

FQD10N20CTM

FQD10N20CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQD10N20CTM
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 121
  • Description: FQD10N20CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Packaging Tape & Reel (TR)
Vgs(th) (Max) @ Id 4V @ 250μA
Series QFET®
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
JESD-609 Code e3
Current - Continuous Drain (Id) @ 25°C 7.8A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Pbfree Code yes
Rise Time 92ns
Part Status Active
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Fall Time (Typ) 72 ns
Number of Terminations 2
Turn-Off Delay Time 70 ns
ECCN Code EAR99
Continuous Drain Current (ID) 7.8A
Resistance 360mOhm
Threshold Voltage 4V
JEDEC-95 Code TO-252AA
Additional Feature FAST SWITCHING
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Subcategory FET General Purpose Power
Height 2.3mm
Voltage - Rated DC 200V
Length 6.6mm
Width 6.1mm
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Terminal Form GULL WING
Lead Free Lead Free
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 7.8A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Factory Lead Time 8 Weeks
JESD-30 Code R-PSSO-G2
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Qualification Status Not Qualified
Number of Elements 1
Contact Plating Tin
Power Dissipation-Max 50W Tc
Mount Surface Mount
Element Configuration Single
Mounting Type Surface Mount
Operating Mode ENHANCEMENT MODE
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation 50W
Case Connection DRAIN
Number of Pins 3
Turn On Delay Time 11 ns
Weight 260.37mg
FET Type N-Channel
Transistor Element Material SILICON
Transistor Application SWITCHING
Operating Temperature -55°C~150°C TJ
Rds On (Max) @ Id, Vgs 360m Ω @ 3.9A, 10V
See Relate Datesheet