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  • FQD5N20LTM

FQD5N20LTM

Trans MOSFET N-CH 200V 3.8A 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQD5N20LTM
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 743
  • Description: Trans MOSFET N-CH 200V 3.8A 3-Pin(2+Tab) DPAK T/R (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C 3.8A Tc
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 5V
Weight 260.37mg
Transistor Element Material SILICON
Rise Time 90ns
Operating Temperature -55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
Series QFET®
Fall Time (Typ) 50 ns
JESD-609 Code e3
Pbfree Code yes
Turn-Off Delay Time 15 ns
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Continuous Drain Current (ID) 3.8A
Number of Terminations 2
Gate to Source Voltage (Vgs) 20V
ECCN Code EAR99
Drain to Source Breakdown Voltage 200V
Terminal Finish Tin (Sn)
Avalanche Energy Rating (Eas) 60 mJ
Subcategory FET General Purpose Power
RoHS Status ROHS3 Compliant
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Lead Free Lead Free
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 3.8A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.5W Ta 37W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Mount Surface Mount
See Relate Datesheet