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  • FQD8P10TM-F085

FQD8P10TM-F085

Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQD8P10TM-F085
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 733
  • Description: Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R (Kg)

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Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 530m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.6A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 110ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 6.6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 26.4A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 530MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 44W Tc
See Relate Datesheet