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FQD9N25TM-F080

Trans MOSFET N-CH 250V 7.4A 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQD9N25TM-F080
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 461
  • Description: Trans MOSFET N-CH 250V 7.4A 3-Pin(2+Tab) DPAK T/R (Kg)

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Details

Tags

Parameters
Drain-source On Resistance-Max 0.42Ohm
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 29.6A
Avalanche Energy Rating (Eas) 165 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 55W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.4A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 105ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 7.4A
JEDEC-95 Code TO-252AB
Gate to Source Voltage (Vgs) 30V
See Relate Datesheet