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FQH8N100C

FQH8N100C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQH8N100C
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 554
  • Description: FQH8N100C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 225W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 225W
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 4 Weeks
Rds On (Max) @ Id, Vgs 1.45 Ω @ 4A, 10V
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Vgs(th) (Max) @ Id 5V @ 250μA
Mount Through Hole
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 8A Tc
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Weight 6.39g
Transistor Element Material SILICON
Rise Time 95ns
Operating Temperature -55°C~150°C TJ
Drain to Source Voltage (Vdss) 1000V
Packaging Tube
Drive Voltage (Max Rds On,Min Rds On) 10V
Published 2013
Vgs (Max) ±30V
Series QFET®
Fall Time (Typ) 80 ns
Turn-Off Delay Time 122 ns
JESD-609 Code e3
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-247AB
Pbfree Code yes
Gate to Source Voltage (Vgs) 30V
Part Status Active
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 1kV
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Avalanche Energy Rating (Eas) 850 mJ
Height 20.82mm
ECCN Code EAR99
Length 15.87mm
Terminal Finish Tin (Sn)
Width 4.82mm
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
See Relate Datesheet