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FQI27N25TU-F085

MOSFET 250V 0.11OHM 25.5A N-CH MOSFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQI27N25TU-F085
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 865
  • Description: MOSFET 250V 0.11OHM 25.5A N-CH MOSFET (Kg)

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Details

Tags

Parameters
Rise Time 164ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 77 ns
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 25.5A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 600 mJ
Radiation Hardening No
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Through Hole
RoHS Status ROHS3 Compliant
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084g
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.13W Ta 417W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.13W
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 12.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25.5A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
See Relate Datesheet