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FQNL2N50BTA

MOSFET 500V N-Channel QFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQNL2N50BTA
  • Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Datasheet: PDF
  • Stock: 394
  • Description: MOSFET 500V N-Channel QFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2001
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 350mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3 Ω @ 175mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 350mA Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 350mA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Height 8mm
Length 4.9mm
Width 3.9mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet