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FQP15P12

FQP15P12 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQP15P12
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 457
  • Description: FQP15P12 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs (Max) ±30V
Factory Lead Time 5 Weeks
Fall Time (Typ) 80 ns
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Turn-Off Delay Time 80 ns
Mount Through Hole
Continuous Drain Current (ID) 15A
Mounting Type Through Hole
Package / Case TO-220-3
JEDEC-95 Code TO-220AB
Weight 1.8g
Gate to Source Voltage (Vgs) 30V
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage -120V
Packaging Tube
Pulsed Drain Current-Max (IDM) 60A
Series QFET®
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lead Free Lead Free
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -120V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -15A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 100ns
Drain to Source Voltage (Vdss) 120V
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet