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  • FQP2N40-F080

FQP2N40-F080

MOSFET N-CH 400V 1.8A TO-220


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQP2N40-F080
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 720
  • Description: MOSFET N-CH 400V 1.8A TO-220 (Kg)

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8 Ω @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 7 ns
Continuous Drain Current (ID) 1.8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 7.2A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 85 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 40W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet