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  • FQP6N40CF

FQP6N40CF

Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB Tube


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQP6N40CF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 431
  • Description: Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB Tube (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Published 2013
Series FRFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 73W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 73W
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 65ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 400V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 270 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
See Relate Datesheet