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  • FQP6N70

FQP6N70

FQP6N70 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQP6N70
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 111
  • Description: FQP6N70 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 6.2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 24.8A
Avalanche Energy Rating (Eas) 600 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 700V
Technology MOSFET (Metal Oxide)
Current Rating 6.2A
Number of Elements 1
Power Dissipation-Max 142W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 142W
Turn On Delay Time 25 ns
FET Type N-Channel
See Relate Datesheet