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FQP8N90C

MOSFET 900V N-Ch Q-FET advance C-Series


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQP8N90C
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 313
  • Description: MOSFET 900V N-Ch Q-FET advance C-Series (Kg)

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Details

Tags

Parameters
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 6.3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 25A
Avalanche Energy Rating (Eas) 850 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 900V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 6.3A
Number of Elements 1
Power Dissipation-Max 171W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 171W
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3.15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.3A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 70 ns
See Relate Datesheet