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  • FQP9P25

FQP9P25

FQP9P25 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQP9P25
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 745
  • Description: FQP9P25 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 620mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -250V
Technology MOSFET (Metal Oxide)
Current Rating -9.4A
Number of Elements 1
Power Dissipation-Max 120W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 120W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 620m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 150ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 9.4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -250V
Avalanche Energy Rating (Eas) 650 mJ
Height 16.3mm
Length 10.67mm
Width 4.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet