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  • FQPF10N20C

FQPF10N20C

FQPF10N20C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF10N20C
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 124
  • Description: FQPF10N20C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 9.5A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 92ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Factory Lead Time 4 Weeks
Fall Time (Typ) 72 ns
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Turn-Off Delay Time 70 ns
Package / Case TO-220-3 Full Pack
Number of Pins 3
Continuous Drain Current (ID) 9.5A
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Threshold Voltage 4V
Packaging Tube
JEDEC-95 Code TO-220AB
Published 2013
Series QFET®
Gate to Source Voltage (Vgs) 30V
JESD-609 Code e3
Pbfree Code yes
Drain to Source Breakdown Voltage 200V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Height 9.19mm
Number of Terminations 3
Length 10.16mm
ECCN Code EAR99
Width 4.7mm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Radiation Hardening No
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
Current Rating 9.5A
RoHS Status ROHS3 Compliant
Number of Elements 1
Lead Free Lead Free
Power Dissipation-Max 38W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
See Relate Datesheet