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  • FQPF11P06

FQPF11P06

FQPF11P06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF11P06
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 515
  • Description: FQPF11P06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 175MOhm
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -11.4A
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection ISOLATED
Turn On Delay Time 6.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.6A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 8.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -60V
Height 16.07mm
Length 10.36mm
Width 4.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet