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FQPF2N80YDTU

MOSFET N-CH 800V TO-220-3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF2N80YDTU
  • Package: TO-220-3 Full Pack, Formed Leads
  • Datasheet: PDF
  • Stock: 768
  • Description: MOSFET N-CH 800V TO-220-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Number of Pins 3
Weight 2.565g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Height 16.07mm
Length 10.36mm
Width 4.9mm
RoHS Status ROHS3 Compliant
See Relate Datesheet