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FQPF3N25

MOSFET N-CH 250V 2.3A TO-220F


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF3N25
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 926
  • Description: MOSFET N-CH 250V 2.3A TO-220F (Kg)

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Details

Tags

Parameters
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 5.5 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 9.2A
Avalanche Energy Rating (Eas) 40 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Current Rating 2.3A
Number of Elements 1
Power Dissipation-Max 27W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 27W
Case Connection ISOLATED
Turn On Delay Time 6.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 1.15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.3A Tc
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet