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  • FQPF3N80C

FQPF3N80C

FQPF3N80C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF3N80C
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 295
  • Description: FQPF3N80C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Power Dissipation 39W
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Rise Time 43.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 32 ns
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Turn-Off Delay Time 22.5 ns
Number of Pins 3
Weight 2.27g
Continuous Drain Current (ID) 3A
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Packaging Tube
Gate to Source Voltage (Vgs) 30V
Published 2003
Series QFET®
Drain Current-Max (Abs) (ID) 3A
JESD-609 Code e3
Drain to Source Breakdown Voltage 800V
Pbfree Code yes
Height 9.19mm
Part Status Active
Length 10.16mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Width 4.7mm
Number of Terminations 3
ECCN Code EAR99
Radiation Hardening No
Terminal Finish Tin (Sn)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Lead Free Lead Free
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 3A
Number of Elements 1
Power Dissipation-Max 39W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet