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FQPF3N80CYDTU

MOSFET N-CH 800V 3A TO-220F


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF3N80CYDTU
  • Package: TO-220-3 Full Pack, Formed Leads
  • Datasheet: PDF
  • Stock: 835
  • Description: MOSFET N-CH 800V 3A TO-220F (Kg)

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Number of Pins 3
Weight 2.565g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 3A
Number of Elements 1
Power Dissipation-Max 39W Tc
Element Configuration Single
Power Dissipation 39W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Rise Time 43.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 22.5 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet