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FQPF47P06YDTU

MOSFET P-CH 60V 30A TO-220F


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF47P06YDTU
  • Package: TO-220-3 Full Pack, Formed Leads
  • Datasheet: PDF
  • Stock: 457
  • Description: MOSFET P-CH 60V 30A TO-220F (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Number of Pins 3
Weight 2.565g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2015
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62W Tc
Element Configuration Single
Power Dissipation 62W
Turn On Delay Time 50 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 450ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 195 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -60V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet