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  • FQPF6N60C

FQPF6N60C

FQPF6N60C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF6N60C
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 523
  • Description: FQPF6N60C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Dual Supply Voltage 600V
Nominal Vgs 4 V
Height 9.19mm
Length 10.16mm
Width 4.7mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 2Ohm
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 5.5A
Number of Elements 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 2.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
See Relate Datesheet