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  • FQPF70N10

FQPF70N10

FQPF70N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF70N10
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 357
  • Description: FQPF70N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage 100V
Height 9.19mm
Length 10.16mm
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Width 4.7mm
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series QFET®
RoHS Status ROHS3 Compliant
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 23MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 35A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 62W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 62W
Case Connection ISOLATED
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 470ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 25V
See Relate Datesheet