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  • FQPF8N60C

FQPF8N60C

FQPF8N60C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQPF8N60C
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 235
  • Description: FQPF8N60C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature FAST SWITCHING
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 7.5A
Number of Elements 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection ISOLATED
Turn On Delay Time 16.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 60.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 64.5 ns
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 7.5A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Dual Supply Voltage 600V
Nominal Vgs 4 V
Height 9.19mm
Length 10.16mm
Width 4.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet