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FQS4900TF

MOSFET N-Ch 60V/ P-Ch 300V Dual QFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQS4900TF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 896
  • Description: MOSFET N-Ch 60V/ P-Ch 300V Dual QFET (Kg)

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Details

Tags

Parameters
Lead Free Lead Free
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 230.4mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FQS4900
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 650mA, 10V
Vgs(th) (Max) @ Id 1.95V @ 20mA
Current - Continuous Drain (Id) @ 25°C 1.3A 300mA
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 60V 300V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 47 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.65Ohm
Drain to Source Breakdown Voltage -300V
Pulsed Drain Current-Max (IDM) 5.2A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
See Relate Datesheet