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FQU10N20LTU

N-CHANNEL POWER MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Origchip NO: 699-FQU10N20LTU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 590
  • Description: N-CHANNEL POWER MOSFET (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 7.6A
Drain-source On Resistance-Max 0.38Ohm
Pulsed Drain Current-Max (IDM) 30.4A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 180 mJ
RoHS Status ROHS3 Compliant
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 51W Tc
See Relate Datesheet